Open AccessImproving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands
Author(s) -
Tongbo Wei,
Qingfeng Kong,
Junxi Wang,
Jing Li,
Yiping Zeng,
Guohong Wang,
Jinmin Li,
Yuanxun Liao,
Yi Fu
Publication year - 2011
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.19.001065
Subject(s) - light emitting diode , materials science , electroluminescence , optoelectronics , nano , diode , inductively coupled plasma , etching (microfabrication) , optics , quantum efficiency , plasma , nanotechnology , layer (electronics) , composite material , physics , quantum mechanics
InGaN-based light emitting diodes (LEDs) with a top nano-roughened p-GaN surface are fabricated using self-assembled CsCl nano-islands as etch masks. Following formation of hemispherical GaN nano-island arrays, electroluminescence (EL) spectra of roughened LEDs display an obvious redshift due to partial compression release in quantum wells through Inductively Coupled Plasma (ICP) etching. At a 350-mA current, the enhancement of light output power of LEDs subjected to ICP treatment with durations of 50, 150 and 250 sec compared with conventional LED have been determined to be 9.2, 70.6, and 42.3%, respectively. Additionally, the extraction enhancement factor can be further improved by increasing the size of CsCl nano-island. The economic and rapid method puts forward great potential for high performance lighting devices.