Open AccessOptical anisotropy and light extraction efficiency of MBE grown GaN nanowires epilayers
Author(s) -
Anne-Line Henneghien,
G. Tourbot,
B. Daudin,
Olivier Lartigue,
Y. Désières,
JeanMichel Gèrard
Publication year - 2011
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.19.000527
Subject(s) - nanowire , materials science , molecular beam epitaxy , optoelectronics , gallium nitride , light emitting diode , anisotropy , substrate (aquarium) , refractive index , gallium , wide bandgap semiconductor , optics , brightness , layer (electronics) , epitaxy , nanotechnology , oceanography , physics , geology , metallurgy
The use of nanowires as active medium seems very promising for the development of high brightness LEDs. With a lower effective refractive index than bulk, semiconductor nanowire layers may lead to a high light extraction efficiency. We hereafter discuss the anisotropic properties of dense arrays of molecular beam epitaxy (MBE) grown gallium nitride (GaN) nanowires and the consequences on the optical design of nanowire based LEDs. In particular we show numerically that light extraction efficiency as high as 72% can be expected for GaN nanowires layer grown on a low cost Si substrate.