Open AccessMid-IR laser oscillation in Cr^2+:ZnSe planar waveguide
Author(s) -
Jonathan Williams,
Vladimir V. Fedorov,
Dmitry Martyshkin,
Igor Moskalev,
Renato P. Camata,
Sergey Mirov
Publication year - 2010
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.18.025999
Subject(s) - zinc selenide , materials science , sapphire , laser , lasing threshold , optics , planar , pulsed laser deposition , optoelectronics , thin film , waveguide , substrate (aquarium) , infrared , wavelength , nanotechnology , oceanography , physics , computer graphics (images) , geology , computer science
We demonstrate 2.6 µm mid-infrared lasing at room temperature in a planar waveguide structure. Planar waveguides were fabricated using pulsed laser deposition (PLD) by depositing chromium doped zinc selenide thin films on sapphire substrate (Cr2+:ZnSe/sapphire). Highly doped Cr2+:ZnSe/Sapphire thin film sample was also used to demonstrate passive Q-switching of Er:YAG laser operating at 1.645 µm.