Open Access11 W single gain-chip dilute nitride disk laser emitting around 1180 nm
Author(s) -
Ville-Markus Korpijärvi,
Tomi Lein,
Janne Puustinen,
Antti Härkönen,
Mircea Guina
Publication year - 2010
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.18.025633
Subject(s) - materials science , disk laser , optics , laser , optoelectronics , laser power scaling , wavelength , microchannel , semiconductor laser theory , nitride , semiconductor , physics , layer (electronics) , composite material , nanotechnology
We report power scaling experiments of a GaInNAs/GaAs-based semiconductor disk laser operating at ~1180 nm. Using a single gain chip cooled to mount temperature of ~10 °C we obtained 11 W of output power. For efficient thermal management we used a water-cooled microchannel mount and an intracavity diamond heat spreader. Laser performance was studied using different spot sizes of the pump beam on the gain chip and different output couplers. Intracavity frequency-doubling experiments led to generation of ~6.2 W of laser radiation at ~590 nm, a wavelength relevant for the development of sodium laser guide stars.