Open AccessInGaN light emitting solar cells with a roughened N-face GaN surface through a laser decomposition process
Author(s) -
Kuei-Ting Chen,
Wan-Chun Huang,
Tsung-Han Hsieh,
Chang-Hua Hsieh,
Chia−Feng Lin
Publication year - 2010
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.18.023406
Subject(s) - materials science , optoelectronics , optics , laser , wavelength , transmittance , solar cell , absorption (acoustics) , physics , composite material
InGaN-based light-emitting solar cell (LESC) structure with an inverted pyramidal structure at GaN/sapphire interface was fabricated through a laser decomposition process and a wet crystallographic etching process. The highest light output power of the laser-treated LESC structure, with a 56% backside roughened-area ratio, had a 75% enhancement compared to the conventional device at a 20 mA operating current. By increasing the backside roughened area, the cutoff wavelength of the transmittance spectra and the wavelength of the peak photovoltaic efficiency had a redshift phenomenon that could be caused by increasing the light absorption at InGaN active layer.