Open AccessTransparent conductive graphene electrode in GaN-based ultra-violet light emitting diodes
Author(s) -
Byung Jae Kim,
Michael A. Mastro,
Jennifer K. Hite,
Charles R. Eddy,
Jihyun Kim
Publication year - 2010
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.18.023030
Subject(s) - graphene , materials science , optoelectronics , raman spectroscopy , electrode , light emitting diode , layer (electronics) , ultraviolet , electrical conductor , diode , optics , nanotechnology , composite material , chemistry , physics
We report a graphene-based transparent conductive electrode for use in ultraviolet (UV) GaN light emitting diodes (LEDs). A few-layer graphene (FLG) layer was mechanically deposited. UV light at a peak wavelength of 368 nm was successfully emitted by the FLG layer as transparent contact to p-GaN. The emission of UV light through the thin graphene layer was brighter than through the thick graphene layer. The thickness of the graphene layer was characterized by micro-Raman spectroscopy. Our results indicate that this novel graphene-based transparent conductive electrode holds great promise for use in UV optoelectronics for which conventional ITO is less transparent than graphene.