Open AccessPhoto-stability of pulsed laser deposited Ge_xAs_ySe_100-x-y amorphous thin films
Author(s) -
Petr Němec,
Sheng tao ZHANG,
Virginie Nazabal,
Kamil Fedus,
Georges Boudebs,
Alain Moréac,
Michel Cathelinaud,
X.-H. Zhang
Publication year - 2010
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.18.022944
Subject(s) - materials science , thin film , optics , chalcogenide , amorphous solid , raman spectroscopy , pulsed laser deposition , scanning electron microscope , ellipsometry , transmittance , spectroscopy , laser , analytical chemistry (journal) , optoelectronics , nanotechnology , chemistry , crystallography , physics , chromatography , quantum mechanics , composite material
Quest for photo-stable amorphous thin films in ternary Ge(x)As(y)Se(100-x-y) chalcogenide system is reported. Studied layers were fabricated using pulsed laser deposition technique. Scanning electron microscope with energy dispersive X-ray analyzer, Raman scattering spectroscopy, transmittance measurements, variable angle spectroscopic ellipsometry, and non-linear imaging technique with phase object inside the 4f imaging system were employed to characterize prepared thin films. Their photo-stability/photo-induced phenomena in as-deposited and relaxed states were also investigated, respectively. In linear regime, we found intrinsically photo-stable relaxed layers within Ge(20)As(20)Se(60) composition. This composition presents also the highest optical damage threshold under non-linear optical conditions.