Photo-stability of pulsed laser deposited Ge_xAs_ySe_100-x-y amorphous thin films | Zendy

Petr Němec | Zendy; S. Zhang | Zendy; V. Nazabal | Zendy; Kamil Fedus | Zendy; Georges Boudebs | Zendy; Alain Moréac | Zendy; M. Cathelinaud | Zendy; Xianghua Zhang | Zendy

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Photo-stability of pulsed laser deposited Ge_xAs_ySe_100-x-y amorphous thin films

Author(s) -

Petr Němec,

S. Zhang,

V. Nazabal,

Kamil Fedus,

Georges Boudebs,

Alain Moréac,

M. Cathelinaud,

Xianghua Zhang

Publication year - 2010

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.18.022944

Subject(s) - materials science , thin film , optics , chalcogenide , amorphous solid , raman spectroscopy , pulsed laser deposition , scanning electron microscope , ellipsometry , transmittance , spectroscopy , laser , analytical chemistry (journal) , optoelectronics , nanotechnology , chemistry , crystallography , physics , chromatography , quantum mechanics , composite material

Quest for photo-stable amorphous thin films in ternary Ge(x)As(y)Se(100-x-y) chalcogenide system is reported. Studied layers were fabricated using pulsed laser deposition technique. Scanning electron microscope with energy dispersive X-ray analyzer, Raman scattering spectroscopy, transmittance measurements, variable angle spectroscopic ellipsometry, and non-linear imaging technique with phase object inside the 4f imaging system were employed to characterize prepared thin films. Their photo-stability/photo-induced phenomena in as-deposited and relaxed states were also investigated, respectively. In linear regime, we found intrinsically photo-stable relaxed layers within Ge(20)As(20)Se(60) composition. This composition presents also the highest optical damage threshold under non-linear optical conditions.

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