Open Access3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser
Author(s) -
Antti Rantamäki,
Alexei Sirbu,
A. Mereuta,
E. Kapon,
Oleg G. Okhotnikov
Publication year - 2010
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.18.021645
Subject(s) - optics , laser , distributed bragg reflector , materials science , disk laser , wavelength , semiconductor , semiconductor laser theory , optoelectronics , wafer , physics
3 W at genuine red wavelength of 650 nm has been achieved from a semiconductor disk laser by frequency doubling. An InP based active medium was fused with a GaAs/AlGaAs distributed Bragg reflector resulting in an integrated monolithic gain mirror. 6.6 W of output power at the fundamental wavelength of 1.3 µm represents the best achievement reported to date for this type of lasers.