Open AccessDispersion engineered Ge_115As_24Se_645 nanowires with a nonlinear parameter of 136W^-1m^-1 at 1550nm
Author(s) -
Xin Gai,
Steve Madden,
DukYong Choi,
Douglas Bulla,
Barry LutherDavies
Publication year - 2010
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.18.018866
Subject(s) - materials science , supercontinuum , electron beam lithography , nanowire , optics , dispersion (optics) , four wave mixing , chalcogenide , optoelectronics , etching (microfabrication) , nonlinear optics , laser , photonic crystal fiber , resist , wavelength , nanotechnology , physics , layer (electronics)
We have fabricated 630 × 500 nm nanowires from Ge(11.5)As(24)Se(64.5) chalcogenide glass by electron beam lithography (EBL) and inductively coupled plasma (ICP) etching. The loss of the nanowire was measured to be 2.6 dB/cm for the fundamental TM mode. The nonlinear coefficient (γ) was determined to be ≈136 ± 7 W(-1)m(-1) at 1550 nm by both CW four-wave-mixing (FWM) and modeling. Supercontinuum (SC) was produced in an 18 mm long nanowire pumped by 1 ps pulses with peak power of 25 W.