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On-chip optical interconnection by using integrated III-V laser diode and photodetector with silicon waveguide
Author(s) -
Kazuya Ohira,
Kentaro Kobayashi,
Norio Iizuka,
Haruhiko Yoshida,
Mizunori Ezaki,
Hiroshi Uemura,
Akihiro Kojima,
Kenro Nakamura,
Hideto Furuyama,
Hideki Shibata
Publication year - 2010
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.18.015440
Subject(s) - materials science , optoelectronics , photodetector , silicon , waveguide , laser , diode , optics , wafer , hybrid silicon laser , substrate (aquarium) , oceanography , physics , geology
On-chip integration of III-V laser diodes and photodetectors with silicon nanowire waveguides is demonstrated. Through flip-chip bonding of GaInNAs/GaAs laser diodes directly onto the silicon substrate, efficient heat dissipation was realized and characteristic temperatures as high as 132K were achieved. Spot-size converters for the laser-to-waveguide coupling were used, with efficiencies greater than 60%. The photodetectors were fabricated by bonding of InGaAs/InP wafers directly to silicon waveguides and formation of metal-semiconductor-metal structures, giving responsivities as high as 0.74 A/W. Both laser diode and the photodetector were integrated with a single silicon waveguide to demonstrate a complete on-chip optical transmission link.

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