Conductor-gap-silicon plasmonic waveguides and passive components at subwavelength scale

Subwavelength conductor-gap-silicon plasmonic waveguides along with compact S-bends and Y-splitters were theoretically investigated and experimentally demonstrated on a silicon-on-insulator platform. A thin SiO2 gap between the conductor layer and silicon core provides subwavelength confinement of light while a long propagation length of 40 microm was achieved. Coupling of light between the plasmonic and conventional silicon photonic waveguides was also demonstrated with a high efficiency of 80%. The compact sizes, low loss operation, efficient input/output coupling, combined with a CMOS-compatible fabrication process, make these conductor-gap-silicon plasmonic devices a promising platform for realizing densely-integrated plasmonic circuits.