Open AccessConductor-gap-silicon plasmonic waveguides and passive components at subwavelength scale
Author(s) -
Marcelo Wu,
Zhanghua Han,
Vien Van
Publication year - 2010
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.18.011728
Subject(s) - plasmon , materials science , optoelectronics , silicon , silicon on insulator , photonic integrated circuit , optics , fabrication , silicon photonics , conductor , hybrid silicon laser , photonics , physics , medicine , alternative medicine , pathology , composite material
Subwavelength conductor-gap-silicon plasmonic waveguides along with compact S-bends and Y-splitters were theoretically investigated and experimentally demonstrated on a silicon-on-insulator platform. A thin SiO2 gap between the conductor layer and silicon core provides subwavelength confinement of light while a long propagation length of 40 microm was achieved. Coupling of light between the plasmonic and conventional silicon photonic waveguides was also demonstrated with a high efficiency of 80%. The compact sizes, low loss operation, efficient input/output coupling, combined with a CMOS-compatible fabrication process, make these conductor-gap-silicon plasmonic devices a promising platform for realizing densely-integrated plasmonic circuits.