Open AccessPulsed pumping of silicon nanocrystal light emitting devices
Author(s) -
Tim Creazzo,
Brandon Redding,
Elton Marchena,
Janusz Murakowski,
Dennis W. Prather
Publication year - 2010
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.18.010924
Subject(s) - materials science , light emitting diode , optoelectronics , electroluminescence , silicon , nanocrystal , excitation , biasing , optics , voltage , nanotechnology , electrical engineering , physics , engineering , layer (electronics)
Typical silicon nanocrystal light emitting devices (LEDs) operate under direct current (DC) biasing conditions that require high electric fields or high current densities. The electroluminescence (EL) under these conditions relies on impact excitation that can be damaging to the material. In this work, we present bipolar injection into silicon nanocrystal LEDs using a pulsed pumping scheme. We measured the frequency dependence of the integrated and time-resolved EL of the LEDs. The frequency dependent behavior of the time-resolved characteristics is used to explain the integrated EL measurements. In addition, the light output of the device was measured under pulsed excitation and was found to increase by a factor of 18 as compared to the case of DC excitation.