Electrically pumped 13 μm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer | Zendy

Katsuaki Tanabe | Zendy; Denis Guimard | Zendy; Damien Bordel | Zendy; Satoshi Iwamoto | Zendy; Yasuhiko Arakawa | Zendy

Open Access

Electrically pumped 13 μm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer

Author(s) -

Katsuaki Tanabe,

Denis Guimard,

Damien Bordel,

Satoshi Iwamoto,

Yasuhiko Arakawa

Publication year - 2010

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.18.010604

Subject(s) - materials science , lasing threshold , optoelectronics , quantum dot , substrate (aquarium) , wafer bonding , wafer , laser , chemical vapor deposition , layer (electronics) , quantum dot laser , semiconductor laser theory , optics , nanotechnology , semiconductor , wavelength , oceanography , physics , geology

An electrically pumped InAs/GaAs quantum dot laser on a Si substrate has been demonstrated. The double-hetero laser structure was grown on a GaAs substrate by metal-organic chemical vapor deposition and layer-transferred onto a Si substrate by GaAs/Si wafer bonding mediated by a 380-nm-thick Au-Ge-Ni alloy layer. This broad-area Fabry-Perot laser exhibits InAs quantum dot ground state lasing at 1.31 microm at room temperature with a threshold current density of 600 A/cm(2).

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