Open AccessElectrically pumped 13 μm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer
Author(s) -
Katsuaki Tanabe,
Denis Guimard,
D. Bordel,
Satoshi Iwamoto,
Yasuhiko Arakawa
Publication year - 2010
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.18.010604
Subject(s) - materials science , lasing threshold , optoelectronics , quantum dot , substrate (aquarium) , wafer bonding , wafer , laser , chemical vapor deposition , layer (electronics) , quantum dot laser , semiconductor laser theory , optics , nanotechnology , semiconductor , wavelength , oceanography , physics , geology
An electrically pumped InAs/GaAs quantum dot laser on a Si substrate has been demonstrated. The double-hetero laser structure was grown on a GaAs substrate by metal-organic chemical vapor deposition and layer-transferred onto a Si substrate by GaAs/Si wafer bonding mediated by a 380-nm-thick Au-Ge-Ni alloy layer. This broad-area Fabry-Perot laser exhibits InAs quantum dot ground state lasing at 1.31 microm at room temperature with a threshold current density of 600 A/cm(2).