Open AccessSurface phonon polariton characteristics of In_004Al_006Ga_090N/AlN/Al_2O_3 heterostructure
Author(s) -
Sha Shiong Ng,
S C Lee,
Siti Khadijah Mohd Bakhori,
Z. Hassan,
H. Abu Hassan,
V. A. Yakovlev,
Н. Н. Новикова,
E. A. Vinogradov
Publication year - 2010
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.18.010354
Subject(s) - polariton , phonon , heterojunction , materials science , surface phonon , optics , spectroscopy , absorption (acoustics) , reflection (computer programming) , attenuated total reflection , infrared , condensed matter physics , analytical chemistry (journal) , optoelectronics , physics , chemistry , quantum mechanics , computer science , composite material , programming language , chromatography
Surface phonon polariton (SPP) characteristics of In(0.04)Al(0.06)Ga(0.90)N/AlN/Al(2)O(3) heterostructure are investigated by means of p-polarized infrared (IR) attenuated total reflection spectroscopy. Two absorption dips corresponding to In(0.04)Al(0.06)Ga(0.90)N SPP modes are observed. In addition, two prominent dips and one relatively weak and broad dip corresponding to the Al(2)O(3) SPP mode, In(0.04)Al(0.06)Ga(0.90)N/Al(2)O(3) interface mode, and Al(2)O(3) bulk polariton mode, respectively, are clearly seen. No surface mode feature originating from the AlN layer is observed because it is too thin. Overall, the observations are in good agreement with the theoretical predictions.