Open AccessHigh speed carrier-depletion modulators with 14V-cm V_πL integrated on 025μm silicon-on-insulator waveguides
Author(s) -
NingNing Feng,
Shirong Liao,
Dazeng Feng,
Po Dong,
Dawei Zheng,
Hong Liang,
Roshanak Shafiiha,
Guoliang Li,
J. E. Cunningham,
Ashok V. Krishnamoorthy,
Mehdi Asghari
Publication year - 2010
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.18.007994
Subject(s) - silicon on insulator , materials science , optics , interferometry , silicon , mach–zehnder interferometer , optoelectronics , waveguide , offset (computer science) , silicon photonics , refractive index , optical carrier transmission rates , physics , optical fiber , computer science , programming language , radio over fiber
We demonstrate a very efficient high speed silicon modulator with an ultralow pi-phase-shift voltage-length product V(pi)L = 1.4V-cm. The device is based on a Mach-Zehnder interferometer (MZI) fabricated using 0.25microm thick silicon-on-insulator (SOI) waveguide with offset lateral PN junctions. Optimal carrier-depletion induced index change has been achieved through the optimization of the overlap region of carriers and photons. The 3dB bandwidth of a typical 1mm long device was measured to be more than 12GHz. An eye-diagram taken at a transmission rate of 12.5Gb/s confirms the high speed capability of the device.