High speed carrier-depletion modulators with 14V-cm V_πL integrated on 025μm silicon-on-insulator waveguides | Zendy

Ning-Ning Feng | Zendy; Shirong Liao | Zendy; Dazeng Feng | Zendy; Po Dong | Zendy; Dawei Zheng | Zendy; Hong Liang | Zendy; Roshanak Shafiiha | Zendy; Guoliang Li | Zendy; J. E. Cunningham | Zendy; Ashok V. Krishnamoorthy | Zendy; Mehdi Asghari | Zendy

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High speed carrier-depletion modulators with 14V-cm V_πL integrated on 025μm silicon-on-insulator waveguides

Author(s) -

Ning-Ning Feng,

Shirong Liao,

Dazeng Feng,

Po Dong,

Dawei Zheng,

Hong Liang,

Roshanak Shafiiha,

Guoliang Li,

J. E. Cunningham,

Ashok V. Krishnamoorthy,

Mehdi Asghari

Publication year - 2010

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.18.007994

Subject(s) - silicon on insulator , materials science , optics , interferometry , silicon , mach–zehnder interferometer , optoelectronics , waveguide , offset (computer science) , silicon photonics , refractive index , optical carrier transmission rates , physics , optical fiber , computer science , programming language , radio over fiber

We demonstrate a very efficient high speed silicon modulator with an ultralow pi-phase-shift voltage-length product V(pi)L = 1.4V-cm. The device is based on a Mach-Zehnder interferometer (MZI) fabricated using 0.25microm thick silicon-on-insulator (SOI) waveguide with offset lateral PN junctions. Optimal carrier-depletion induced index change has been achieved through the optimization of the overlap region of carriers and photons. The 3dB bandwidth of a typical 1mm long device was measured to be more than 12GHz. An eye-diagram taken at a transmission rate of 12.5Gb/s confirms the high speed capability of the device.

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