Open AccessHigh performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes
Author(s) -
Liangyi Chen,
Ying-Yuan Huang,
ChunHsiang Chang,
Yu-Hsuan Sun,
Ying Cheng,
Min-Yung Ke,
Cheng-Pin Chen,
JianJang Huang
Publication year - 2010
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.18.007664
Subject(s) - nanorod , materials science , chemical mechanical planarization , optoelectronics , light emitting diode , passivation , nanosphere lithography , chemical vapor deposition , plasma enhanced chemical vapor deposition , wafer , polishing , lithography , diode , layer (electronics) , nanotechnology , fabrication , composite material , medicine , alternative medicine , pathology
We fabricated InGaN/GaN nanorod light emitting diode (LED) arrays using nanosphere lithography for nanorod formation, PECVD (plasma enhanced chemical vapor deposition) grown SiO(2) layer for sidewall passivation, and chemical mechanical polishing for uniform nanorod contact. The nano-device demonstrates a reverse current 4.77nA at -5V, an ideality factor 7.35, and an optical output intensity 6807mW/cm(2) at the injection current density 32A/cm(2) (20mA). Moreover, the investigation of the droop effect for such a nanorod LED array reveals that junction heating is responsible for the sharp decrease at the low current.