Direct-bandgap luminescence at room-temperature from highly-strained Germanium nanocrystals | Zendy

Latha Nataraj | Zendy; Fan Xu | Zendy; Sylvain G. Cloutier | Zendy

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Direct-bandgap luminescence at room-temperature from highly-strained Germanium nanocrystals

Author(s) -

Latha Nataraj,

Fan Xu,

Sylvain G. Cloutier

Publication year - 2010

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.18.007085

Subject(s) - materials science , germanium , luminescence , photoluminescence , optoelectronics , raman spectroscopy , direct and indirect band gaps , spectroscopy , microelectronics , band gap , nanocrystal , photonics , silicon , optics , nanotechnology , physics , quantum mechanics

Efficient room-temperature luminescence at optical telecommunication wavelengths and originating from direct band-to-band recombination has been observed in tensile-strained germanium nanocrystals synthesized by mechanical grinding techniques. Selected area electron diffraction, micro-Raman and optical-absorption spectroscopy measurements indicate high tensile-strains while combined photoluminescence spectroscopy, excitation-power evolution and time-resolved measurements suggest direct band-to-band recombination. Such band-engineered germanium nanocrystals offer great possibilities for silicon-photonics integration due to their superb light-emission properties, facile fabrication and compatibility with standard microelectronic processes.

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