Effects of intermixing on modulation p-doped quantum dot superluminescent light emitting diodes | Zendy

Z.Y. Zhang | Zendy; Qi Jiang | Zendy; M. Hopkinson | Zendy; R. A. Hogg | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Effects of intermixing on modulation p-doped quantum dot superluminescent light emitting diodes

Author(s) -

Z.Y. Zhang,

Qi Jiang,

M. Hopkinson,

R. A. Hogg

Publication year - 2010

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.18.007055

Subject(s) - quantum dot , optoelectronics , materials science , diode , doping , optics , light emitting diode , modulation (music) , superluminescent diode , annealing (glass) , physics , acoustics , composite material

Different capping of quantum dot (QD) materials is known to produce different degrees of intermixing during a post-growth thermal annealing process. We report a study of the effect of different degrees of intermixing on modulation beryllium doped quantum dot superluminescent light emitting diodes (QD-SLEDs). The intermixed QD-SLEDs show high device performance whilst achieving a large central emission wavelength shift of approximately 100nm compared to the as-grown device. The evolution of the emission spectra and power with drive current suggest a transition from QD-like to QW-like behavior with increasing degree of intermixing. A selective area intermixed QD-SLED is demonstrated, and with optimized differential intermixing, such structures should allow ultra-broadband sources to be realized.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research