Open AccessEffects of intermixing on modulation p-doped quantum dot superluminescent light emitting diodes
Author(s) -
Z.Y. Zhang,
Qi Jiang,
M. Hopkinson,
R. A. Hogg
Publication year - 2010
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.18.007055
Subject(s) - quantum dot , optoelectronics , materials science , diode , doping , optics , light emitting diode , modulation (music) , superluminescent diode , annealing (glass) , physics , acoustics , composite material
Different capping of quantum dot (QD) materials is known to produce different degrees of intermixing during a post-growth thermal annealing process. We report a study of the effect of different degrees of intermixing on modulation beryllium doped quantum dot superluminescent light emitting diodes (QD-SLEDs). The intermixed QD-SLEDs show high device performance whilst achieving a large central emission wavelength shift of approximately 100nm compared to the as-grown device. The evolution of the emission spectra and power with drive current suggest a transition from QD-like to QW-like behavior with increasing degree of intermixing. A selective area intermixed QD-SLED is demonstrated, and with optimized differential intermixing, such structures should allow ultra-broadband sources to be realized.