Open AccessElectro-optic modulator with exceptional power-size performance enabled by transparent conducting electrodes
Author(s) -
Fei Yi,
Fang Ou,
Boyang Liu,
Yingyan Huang,
Seng-Tiong Ho,
Yiliang Wang,
Jun Liu,
Tobin J. Marks,
Su Huang,
Jingdong Luo,
Alex K.Y. Jen,
Raluca Dinu,
Dan Jin
Publication year - 2010
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.18.006779
Subject(s) - insertion loss , materials science , optics , bandwidth (computing) , figure of merit , phase modulation , optoelectronics , modulation (music) , voltage , electrode , optical modulator , physics , telecommunications , computer science , quantum mechanics , phase noise , acoustics
An EO phase modulator having transparent conducting oxide electrodes and an inverted rib waveguide structure is demonstrated. This new modulator geometry employs an EO polymer having an in-device r33 = 60pm/V. The measured half-wave voltage Vpi of these devices ranges from 5.3V to 11.2V for 3.8 and 1.5 mm long devices, respectively. The lowest VpiL figure-of-merit corresponds to 0.6V-cm (7.2mW-cm(2) of power length product) in a dual-drive configuration. The trade-off between Vpi, insertion loss and modulation bandwidth is systematically analyzed. An optimized high-speed structure is proposed, with numerical simulation showing that this new structure and an in-device r33 = 150pm/V, can achieve Vpi = 0.5V in a 5mm long active length with dual drive operation. The insertion loss is targeted at 6dB, and a 3dB optical modulation bandwidth can reach > 40GHz.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom