Improved sensitivity of nonvolatile holographic storage in triply doped LiNbO_3:Zr,Cu,Ce | Zendy

Fucai Liu | Zendy; Yongfa Kong | Zendy; Xinyu Ge | Zendy; Hongde Liu | Zendy; Shiguo Liu | Zendy; Shaolin Chen | Zendy; R. A. Rupp | Zendy; Jingjun Xu | Zendy

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Improved sensitivity of nonvolatile holographic storage in triply doped LiNbO_3:Zr,Cu,Ce

Author(s) -

Fucai Liu,

Yongfa Kong,

Xinyu Ge,

Hongde Liu,

Shiguo Liu,

Shaolin Chen,

R. A. Rupp,

Jingjun Xu

Publication year - 2010

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.18.006333

Subject(s) - materials science , photorefractive effect , doping , holography , optics , optical storage , diffraction efficiency , holographic data storage , 3d optical data storage , optoelectronics , lithium niobate , crystal (programming language) , physics , computer science , programming language , grating

We have designed and grown triply doped LiNbO(3):Zr,Cu,Ce crystal and investigated its characteristics of nonvolatile holographic storage. It's observed that the photorefractive sensitivity of LiNbO(3):Zr,Cu,Ce has improved to 0.099 cm/J, which is about one order of magnitude larger than that of congruent LiNbO(3):Cu,Ce. And LiNbO(3):Zr,Cu,Ce also has high suppression to light-induced scattering. Our results indicated that triply doped LiNbO(3):Zr,Cu,Ce is an excellent candidate for nonvolatile holographic data storage.

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