Open AccessImproved sensitivity of nonvolatile holographic storage in triply doped LiNbO_3:Zr,Cu,Ce
Author(s) -
Fucai Liu,
Yongfa Kong,
Xinyu Ge,
Hongde Liu,
Shiguo Liu,
Shaolin Chen,
R. A. Rupp,
Jingjun Xu
Publication year - 2010
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.18.006333
Subject(s) - materials science , photorefractive effect , doping , holography , optics , optical storage , diffraction efficiency , holographic data storage , 3d optical data storage , optoelectronics , lithium niobate , crystal (programming language) , physics , computer science , programming language , grating
We have designed and grown triply doped LiNbO(3):Zr,Cu,Ce crystal and investigated its characteristics of nonvolatile holographic storage. It's observed that the photorefractive sensitivity of LiNbO(3):Zr,Cu,Ce has improved to 0.099 cm/J, which is about one order of magnitude larger than that of congruent LiNbO(3):Cu,Ce. And LiNbO(3):Zr,Cu,Ce also has high suppression to light-induced scattering. Our results indicated that triply doped LiNbO(3):Zr,Cu,Ce is an excellent candidate for nonvolatile holographic data storage.