Open AccessStudy on the effect of heat-annealing and irradiation on spectroscopic properties of Bi:α-BaB_2O_4 single crystal
Author(s) -
Jun Xu,
Hengyu Zhao,
Liangbi Su,
Jun Yu,
Peng Zhou,
Huili Tang,
Lihe Zheng,
Hongjun Li
Publication year - 2010
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.18.003385
Subject(s) - irradiation , luminescence , materials science , annealing (glass) , ion , bismuth , infrared , analytical chemistry (journal) , single crystal , infrared spectroscopy , crystal (programming language) , absorption spectroscopy , atomic physics , optics , nuclear magnetic resonance , optoelectronics , physics , chemistry , chromatography , quantum mechanics , computer science , nuclear physics , metallurgy , composite material , programming language
The absorption, excitation, and ultrabroadband near-infrared luminescence spectra of Bismuth were investigated in H(2)-annealed and gamma-irradiated Bi:alpha-BaB(2)O(4)(alpha-BBO) single crystals, respectively. Energy-level diagrams of the near-infrared luminescent centers were fixed. The electronic transition energies of near-infrared active centers are basically consistent with the multiplets of free Bi(+) ions. The minor difference of the energy-level diagrams of Bi(+) ions in H(2)-annealed and gamma-irradiated Bi:alpha-BaB(2)O(4) crystals can be ascribed to the difference of the local lattice environments. The involved physical and chemical processes were discussed. The effect of Ar-, air-annealing and electron-irradiation on Bi:alpha-BaB(2)O(4) crystal were also investigated.