Open AccessPerformance investigation of GaN-based light-emitting diodes with tiny misorientation of sapphire substrates
Author(s) -
Yi-Jung Liu,
Tsung-Yuan Tsai,
Chih−Hung Yen,
LiYang Chen,
Tsung-Han Tsai,
ChienChang Huang,
Tai-You Chen,
Cheng-Liang Hsu,
WenChau Liu
Publication year - 2010
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.18.002729
Subject(s) - materials science , sapphire , light emitting diode , optoelectronics , misorientation , diode , indium , vicinal , optics , quantum efficiency , substrate (aquarium) , tilt (camera) , laser , microstructure , physics , oceanography , grain boundary , metallurgy , geology , mechanical engineering , engineering , quantum mechanics
GaN-based light-emitting diodes (LEDs) grown on c-plane vicinal sapphire substrates are fabricated and characterized. Based on the material quality and electrical properties, the LED with a 0.2 degrees tilt sapphire substrate (device A) exhibits the lowest defect density and high performance, while the LED with a 1.0 degrees tilt sapphire (device D) exhibits the highest one. At 2 mA, the extremely enhanced output power of 23.3% indicates of the reduction of defect-related nonradiative recombination centers in active layers for the device A. At 60 mA, the improved value is up to 45.7%. This is primarily caused by the formation of indium quantum dots in MQW which provides an increased quantum efficiency.