Open AccessDirect patterning of silicon oxide on Si-substrate induced by femtosecond laser
Author(s) -
Amirkianoosh Kiani,
Krishnan Venkatakrishnan,
Bo Tan
Publication year - 2010
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.18.001872
Subject(s) - materials science , femtosecond , silicon , scanning electron microscope , optics , silicon oxide , substrate (aquarium) , laser , raman spectroscopy , optoelectronics , oxide , silicon nitride , physics , oceanography , metallurgy , composite material , geology
In this study we report for the first time a method for direct patterning of silicon oxide on a silicon substrate by irradiation with a femtosecond laser of Mega Hertz pulse frequency under ambient condition. Embossed lines of silicon oxide with around 3 approximately 4 microm width and less than 100 nm height were formed by controlling the parameters such as laser pulse power and frequency rate. A Scanning Electron Microscope (SEM), an optical microscopy and a Micro-Raman and Energy Dispersive X-ray (EDX) spectroscopy were used to analyze the silicon oxide layer.