Open AccessInGaZnO semiconductor thin film fabricated using pulsed laser deposition
Author(s) -
Jiangbo Chen,
Li Wang,
Xueqiong Su,
Le Kong,
Guoqing Liu,
Xinping Zhang
Publication year - 2010
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.18.001398
Subject(s) - materials science , thin film , x ray photoelectron spectroscopy , pulsed laser deposition , semiconductor , diffraction , optics , transmittance , optoelectronics , deposition (geology) , laser , quartz , analytical chemistry (journal) , nanotechnology , composite material , nuclear magnetic resonance , paleontology , physics , sediment , biology , chemistry , chromatography
The InGaZnO thin films are fabricated on the quartz glass using pulsed laser deposition (PLD), where the target is prepared by mixing the Ga(2)O(3), In(2)O(3), and ZnO powders at a mol ratio of 1:1:8 before the solid-state reactions in a tube furnace at the atmospheric pressure. The product thin films were characterized comprehensively by X-ray diffraction, atomic force microscopy, Hall-effect investigation, and X-ray photoelectron spectroscopy. Thus, we demonstrate semiconductor thin-film materials with high smoothness, high transmittance in visible region, and excellent electrical properties.