Open AccessSuppressing the turn-off-induced pulsations in VCSELs using an elevated oxide-layer structure
Author(s) -
Tae-Yong Kim,
Sangbae Kim
Publication year - 2010
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.18.001271
Subject(s) - oxide , optics , vertical cavity surface emitting laser , materials science , optoelectronics , layer (electronics) , laser , transient (computer programming) , turn (biochemistry) , physics , nanotechnology , nuclear magnetic resonance , computer science , metallurgy , operating system
We have demonstrated that, in elevated oxide-layer vertical-cavity surface-emitting lasers (VCSELs) where the spacing between 1-lambda cavity and oxide layer is 9lambda/4, a variety of turn-off-induced abnormalities such as secondary pulsations, bumps and tails is effectively suppressed. Compared are turn-off transient responses of conventional and elevated oxide-layer VCSELs with the oxide-aperture diameter of approximately 6.6 microm. The "on"- and "off"-current dependence of the turn-off-induced transient responses and bit rate dependence of the timing jitters show that the elevated oxide-layer structure effectively suppresses the turn-off-induced pulsations to less than half of the conventional one, which enables the VCSEL transmitter to operate without deleterious effects by the turnoff-induced pulsation.