Open AccessEnhanced electroluminescence from SiN-based multilayer structure by laser crystallization of ultrathin amorphous Si-rich SiN layers
Author(s) -
Rui Huang,
D. Q. Wang,
Ding Hong-Lin,
X. Wang,
K. J. Chen,
Jun Xu,
Yang Guo,
Jie Song,
Z. Y.
Publication year - 2010
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.18.001144
Subject(s) - materials science , fluence , electroluminescence , laser , amorphous solid , crystallization , optoelectronics , irradiation , nanocrystal , chemical vapor deposition , quantum efficiency , optics , nanotechnology , crystallography , chemical engineering , chemistry , physics , engineering , layer (electronics) , nuclear physics
Luminescent SiN-based multilayers were prepared in a plasma enhanced chemical vapor deposition system followed by subsequently laser crystallization of ultrathin amorphous Si-rich SiN sublayers. The cross-sectional TEM analysis reveals that grain size of Si nanocrystals embedded in the Si-rich SiN sublayers is independent of the laser fluence, while the grain density can be well controlled by the laser fluence. The devices containing the laser crystallized multilayers show a low turn-on voltage of 5 V and exhibit strong green light emission under both optical and electrical excitations. Moreover, the device after laser-irradiated at 554 mJ/cm(2) shows a significantly enhanced EL intensity as well as external quantum efficiency compared with the device without laser irradiation. The EL mechanism is suggested from the bipolar recombination of electron-hole pairs at Si nanocrystals. The improved performance of the devices was discussed.