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Analysis of photogenerated random telegraph signal in single electron detector (photo-SET)
Author(s) -
M. Troudi,
N. Sghaier,
Adel Kalboussi,
Abdelkader Souifi
Publication year - 2009
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.18.000001
Subject(s) - detector , optics , signal (programming language) , photon counting , photon , optoelectronics , physics , photodetector , photoconductivity , materials science , electron , position (finance) , computer science , programming language , finance , quantum mechanics , economics
In this paper, we analyzed slow single traps, situated inside the tunnel oxide of small area single electron photo-detector (photo-SET or nanopixel). The relationship between excitation signal (photons) and random-telegraph-signal (RTS) was evidenced. We demonstrated that photoinduced RTS observed on a photo-detector is due to the interaction between single photogenerated charges that tunnel from dot to dot and current path. Based on RTS analysis for various temperatures, gate bias and optical power we determined the characteristics of these single photogenerated traps: the energy position within the silicon bandgap, capture cross section and the position within the Si/SiO(x = 1.5) interfaces.

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