Open AccessUV light emission from GZO/ZnO/GaN heterojunction diodes with carrier confinement layers
Author(s) -
Min-Yung Ke,
Tsung-Chien Lu,
Sheng-Chieh Yang,
Cheng-Pin Chen,
Ying Cheng,
Liangyi Chen,
Chengying Chen,
JrHau He,
JianJang Huang
Publication year - 2009
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.17.022912
Subject(s) - materials science , optoelectronics , diode , light emitting diode , heterojunction , optics , spontaneous emission , wavelength , layer (electronics) , laser , nanotechnology , physics
In this work, GZO/ZnO/GaN diodes with the light emitting ZnO layer sandwiched between two SiO(2) thin films was fabricated and characterized. We observed a strong excitonic emission at the wavelength 377nm with the Mg(2+) deep level transition and oxygen vacancy induced recombination significantly suppressed. In comparison, light emission from the GZO/GaN device (without SiO(2) barriers) is mainly dominant by defect radiation. Furthermore, the device with confinement layers demonstrated a much higher UV intensity than the blue-green emission of the GZO/GaN p-n device.