UV light emission from GZO/ZnO/GaN heterojunction diodes with carrier confinement layers | Zendy

Min-Yung Ke | Zendy; Tzu-Chun Lu | Zendy; ShengChieh Yang | Zendy; ChengPin Chen | Zendy; Yun-Wei Cheng | Zendy; Liangyi Chen | Zendy; Cheng–Ying Chen | Zendy; JrHau He | Zendy; JianJang Huang | Zendy

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UV light emission from GZO/ZnO/GaN heterojunction diodes with carrier confinement layers

Author(s) -

Min-Yung Ke,

Tzu-Chun Lu,

ShengChieh Yang,

ChengPin Chen,

Yun-Wei Cheng,

Liangyi Chen,

Cheng–Ying Chen,

JrHau He,

JianJang Huang

Publication year - 2009

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.17.022912

Subject(s) - materials science , optoelectronics , diode , light emitting diode , heterojunction , optics , spontaneous emission , wavelength , layer (electronics) , laser , nanotechnology , physics

In this work, GZO/ZnO/GaN diodes with the light emitting ZnO layer sandwiched between two SiO(2) thin films was fabricated and characterized. We observed a strong excitonic emission at the wavelength 377nm with the Mg(2+) deep level transition and oxygen vacancy induced recombination significantly suppressed. In comparison, light emission from the GZO/GaN device (without SiO(2) barriers) is mainly dominant by defect radiation. Furthermore, the device with confinement layers demonstrated a much higher UV intensity than the blue-green emission of the GZO/GaN p-n device.

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