Low power and fast electro-optic silicon modulator with lateral p-i-n embedded photonic crystal nanocavity | Zendy

Takasumi Tanabe | Zendy; Katsuhiko Nishiguchi | Zendy; Eiichi Kuramochi | Zendy; Masaya Notomi | Zendy

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Low power and fast electro-optic silicon modulator with lateral p-i-n embedded photonic crystal nanocavity

Author(s) -

Takasumi Tanabe,

Katsuhiko Nishiguchi,

Eiichi Kuramochi,

Masaya Notomi

Publication year - 2009

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.17.022505

Subject(s) - photonic crystal , optics , materials science , optoelectronics , silicon , modulation (music) , silicon photonics , power (physics) , photonic integrated circuit , optical power , photonics , chip , electrical engineering , laser , physics , engineering , quantum mechanics , acoustics

We have fabricated high-Q photonic crystal nanocavities with a lateral p-i-n structure to demonstrate low-power and high-speed electro-optic modulation in a silicon chip. GHz operation is demonstrated at a very low (microW level) operating power, which is about 4.6 times lower than that reported for other cavities in silicon. This low-power operation is due to the small size and high-Q of the photonic crystal nanocavity.

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