Open AccessLow power and fast electro-optic silicon modulator with lateral p-i-n embedded photonic crystal nanocavity
Author(s) -
Takasumi Tanabe,
Katsuhiko Nishiguchi,
Eiichi Kuramochi,
Masaya Notomi
Publication year - 2009
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.17.022505
Subject(s) - photonic crystal , optics , materials science , optoelectronics , silicon , modulation (music) , silicon photonics , power (physics) , photonic integrated circuit , optical power , photonics , chip , electrical engineering , laser , physics , engineering , quantum mechanics , acoustics
We have fabricated high-Q photonic crystal nanocavities with a lateral p-i-n structure to demonstrate low-power and high-speed electro-optic modulation in a silicon chip. GHz operation is demonstrated at a very low (microW level) operating power, which is about 4.6 times lower than that reported for other cavities in silicon. This low-power operation is due to the small size and high-Q of the photonic crystal nanocavity.