Open AccessLow V_pp, ultralow-energy, compact, high-speed silicon electro-optic modulator
Author(s) -
Po Dong,
Shirong Liao,
Dazeng Feng,
Hong Liang,
Dawei Zheng,
Roshanak Shafiiha,
Cheng-Chih Kung,
Wei Qian,
Guoliang Li,
Xuezhe Zheng,
Ashok V. Krishnamoorthy,
Mehdi Asghari
Publication year - 2009
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.17.022484
Subject(s) - optics , insertion loss , materials science , modulation (music) , resonator , optoelectronics , silicon , refractive index , electro optic modulator , diode , optical modulator , phase modulation , physics , acoustics , phase noise
We present a high-speed silicon optical modulator with a low V(pp) (peak-to-peak driving voltage) and ultralow energy consumption based on a microring resonator, with the refractive index modulation achieved by electric-field-induced carrier depletion in a reverse-biased lateral pn diode embedded in the ring structure. With a V(pp) of 2 V, we demonstrate a silicon modulator with a 3 dB bandwidth of 11 GHz, a modulation depth of 6.5 dB together with an insertion loss of 2 dB, ultralow energy consumption of 50 fJ per bit, and a small device active area of approximately 1000 microm(2).