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A high spectral sensitivity interferometer based on the dispersive property of the semiconductor GaAs
Author(s) -
Yuanxue Cai,
Yundong Zhang,
Chaobo Yang,
Boshi Dang,
Jinfang Wang,
Ping Yuan
Publication year - 2009
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.17.022254
Subject(s) - interferometry , optics , astronomical interferometer , sensitivity (control systems) , semiconductor , materials science , refractive index , optoelectronics , infrared , spectral sensitivity , physics , electronic engineering , engineering , wavelength
We develop an interferometer which has high spectral sensitivity based on the dispersive property of the semiconductor GaAs in the near-infrared region. Our experiment demonstrates that the spectral sensitivity could be greatly enhanced by adding a slow light medium into the interferometer and is proportional to the group index of the material. Subsequently the factors which influence the spectral sensitivity of the interferometer are analyzed. Moreover, we provide potential applications of such interferometers using the dispersive property of semiconductor in whole infrared region.

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