Open AccessDevice based in-chip critical dimension and overlay metrology
Author(s) -
Young Nam Kim,
Jong-Sun Paek,
Silvio Rabello,
Sang Bong Lee,
Jiangtao Hu,
Zhuan Liu,
Yong Ping Hao,
William A. McGahan
Publication year - 2009
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.17.021336
Subject(s) - metrology , critical dimension , chip , lithography , overlay , semiconductor device fabrication , optics , microelectronics , dimensional metrology , computer science , reticle , materials science , electronic engineering , optoelectronics , engineering , wafer , physics , telecommunications , programming language
The use of optical metrology techniques in process control for microelectronic manufacturing has become widespread. These techniques are fast and non-destructive, allowing a higher sampling rate than non-optical methods like scanning electron or atomic force microscopy. One drawback of most optical metrology tools is the requirement that special measurement structures be fabricated in the scribe line between chips. This poses significant limitations regarding the characterization of lithography processes that may be overcome via in-chip measurements. In this paper we present experimental results for an in-chip optical metrology technique that allows direct measurement of both critical dimensions and overlay displacement errors in the DRAM manufacturing process. This technique does not require special target structures and is performed on the actual semiconductor devices.