Open AccessMeasurement and modeling of hiigh-linearity modified uni-traveling carrier photodiode with highly-doped absorber
Author(s) -
Huapu Pan,
Zhi Li,
Andreas Beling,
Joe C. Campbell
Publication year - 2009
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.17.020221
Subject(s) - photodiode , intermodulation , materials science , optics , optoelectronics , doping , linearity , third order , physics , amplifier , cmos , philosophy , theology , quantum mechanics
The third-order intermodulation distortions of InGaAs/InP modified uni-traveling carrier photodiodes with a highly-doped p-type absorber are characterized. The third-order local intercept point is 55 dBm at low frequency (< 3 GHz) and remains as high as 47.5 dBm up to 20 GHz. The frequency characteristics of the OIP3 are well explained by an equivalent circuit model.