Measurement and modeling of hiigh-linearity modified uni-traveling carrier photodiode with highly-doped absorber | Zendy

Huapu Pan | Zendy; Zhi Li | Zendy; Andréas Beling | Zendy; Joe C. Campbell | Zendy

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Measurement and modeling of hiigh-linearity modified uni-traveling carrier photodiode with highly-doped absorber

Author(s) -

Huapu Pan,

Zhi Li,

Andréas Beling,

Joe C. Campbell

Publication year - 2009

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.17.020221

Subject(s) - photodiode , intermodulation , materials science , optics , optoelectronics , doping , linearity , third order , physics , amplifier , cmos , philosophy , theology , quantum mechanics

The third-order intermodulation distortions of InGaAs/InP modified uni-traveling carrier photodiodes with a highly-doped p-type absorber are characterized. The third-order local intercept point is 55 dBm at low frequency (< 3 GHz) and remains as high as 47.5 dBm up to 20 GHz. The frequency characteristics of the OIP3 are well explained by an equivalent circuit model.

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