Open AccessElectric-field-induced random lasing from ZnO and Mg_01Zn_09O films optically pumped with an extremely low intensity
Author(s) -
Peiliang Chen,
Xiangyang Ma,
Dongsheng Li,
Yuanyuan Zhang,
Deren Yang
Publication year - 2009
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.17.018513
Subject(s) - lasing threshold , electric field , materials science , optics , laser , intensity (physics) , ultraviolet , optoelectronics , random laser , optical pumping , physics , quantum mechanics
Ultraviolet random lasing from ZnO and Mg(0.1)Zn(0.9)O films have been achieved under optical pump of a continuous wave He-Cd laser as the films are simultaneously exerted by an electric-field with appropriate polarity and amplitude. With the aid of electric-field, the optical pump intensity for generating random lasing can be reduced at least five orders of magnitude in comparison with conventional pulse-laser pumped ones. It is believed that the role of electric-field exerted on the films is similar to that of increasing optical pump intensity, in terms of increasing the amount of non-equilibrium electrons in the near-surface regions of films.