Open AccessAn L-band monolithic InAs/InP quantum dot mode-locked laser with femtosecond pulses
Author(s) -
Zhenguo Lü,
J.R. Liu,
Philip J. Poole,
S. Raymond,
Pedro Barrios,
Daniel Poitras,
G. Pakulski,
P. D. Grant,
David Roy-Guay
Publication year - 2009
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.17.013609
Subject(s) - laser linewidth , optoelectronics , materials science , lasing threshold , quantum dot , quantum dot laser , laser , femtosecond , optics , pulse duration , semiconductor laser theory , physics , semiconductor , wavelength
We have developed an InAs/InP quantum dot (QD) gain material using a double cap growth procedure and GaP sublayer to tune QDs into the L-band. By using it, a passive L-band mode-locked laser with pulse duration of 445 fs at the repetition rate of 46 GHz was demonstrated. The 3-dB linewidth of the RF spectrum is less than 100 KHz. The lasing threshold injection current is 24 mA with an external differential quantum efficiency of 22% and an average output power of 27 mW. The relationship between pulse duration and 3-dB spectral bandwidth as a function of injection current was investigated.