Open AccessLateral current injection GaInAsP/InP laser on semi-insulating substrate for membrane-based photonic circuits
Author(s) -
Tadashi Okumura,
Mineo Kurokawa,
Mizuki Shirao,
Daisuke Kondo,
Hitomi Ito,
N. Nishiyama,
Takeo Minamikawa,
Shigehisa Arai
Publication year - 2009
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.17.012564
Subject(s) - materials science , optoelectronics , current density , laser , optics , substrate (aquarium) , current (fluid) , gallium arsenide , semiconductor laser theory , quantum well , photonic integrated circuit , photonics , semiconductor , physics , oceanography , quantum mechanics , thermodynamics , geology
A room-temperature pulsed operation was demonstrated using lateral current injection-type lasers composed of a 400-nm-thick GaInAsP core layer with compressively strained 5 quantum wells. A threshold current of 105 mA and corresponding density of 1.3 kA/cm(2) (260 A/cm(2) per well) were obtained with the stripe width of 5.4 microm and the cavity length of 1.47 mm. A fundamental transverse mode operation was obtained with the narrower stripe device of 2.0 microm and the cavity length of 805 microm, while the threshold current and corresponding density were 49 mA and 3.0 kA/cm(2), respectively.