Open AccessSilicon waveguide infrared photodiodes with >35 GHz bandwidth and phototransistors with 50 AW-1 response
Author(s) -
M. W. Geis,
Steven J. Spector,
Matthew E. Grein,
Junghyo Yoon,
Donna Len,
T. M. Lyszczarz
Publication year - 2009
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.17.005193
Subject(s) - photodiode , optoelectronics , photodetector , quantum efficiency , materials science , fabrication , silicon on insulator , optics , responsivity , silicon , waveguide , dark current , detector , bandwidth (computing) , infrared , specific detectivity , annealing (glass) , physics , telecommunications , medicine , alternative medicine , pathology , computer science , composite material
SOI CMOS compatible Si waveguide photodetectors are made responsive from 1100 to 1750 nm by Si+ implantation and annealing. Photodiodes have a bandwidth of >35 GHz, an internal quantum efficiency of 0.5 to 10 AW-1, and leakage currents of 0.5 nA to 0.5 microA. Phototransistors have an optical response of 50 AW-1 with a bandwidth of 0.2 GHz. These properties are related to carrier mobilities in the implanted Si waveguide. These detectors exhibit low optical absorption requiring lengths from <0.3 mm to 3 mm to absorb 50% of the incoming light. However, the high bandwidth, high quantum efficiency, low leakage current, and potentially high fabrication yields, make these devices very competitive when compared to other detector technologies.