Open AccessBi-doped BaF_2 crystal for broadband near-infrared light source
Author(s) -
Jian Ruan,
Liangbi Su,
Jianrong Qiu,
Danping Chen,
Jun Xu
Publication year - 2009
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.17.005163
Subject(s) - materials science , doping , crystal (programming language) , luminescence , optics , infrared , broadband , absorption (acoustics) , absorption spectroscopy , vacancy defect , optoelectronics , excitation , physics , nuclear magnetic resonance , computer science , composite material , programming language , quantum mechanics
Bi-doped BaF(2) crystal was grown by the temperature gradient technique and its spectral properties were investigated. The absorption, emission and excitation spectra were measured at room temperature. Two broadband emissions centered at 1070 and 1500 nm were observed in Bi-doped BaF(2) crystal. This extraordinary luminescence should be ascribed to Bi-related centers at distinct sites. We suggest Bi(2+) or Bi(+) centers adjacent to F vacancy defects are the origins of the observed NIR emissions.