Dynamics of band-edge photonic crystal lasers
Author(s) -
Fabrice Raineri,
A. M. Yacomotti,
T. J. Karle,
Richard Hostein,
Rémy Braive,
A. Beveratos,
I. Sagnes,
R. Raj
Publication year - 2009
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.17.003165
Subject(s) - photonic crystal , optics , materials science , laser , photonic integrated circuit , optoelectronics , semiconductor laser theory , ranging , photonics , enhanced data rates for gsm evolution , physics , telecommunications , computer science
Band-edge photonic crystal lasers were fabricated and their temporal characteristics were minutely analyzed using a high resolution up-conversion system. The InGaAs/InP photonic crystal laser operates at room temperature at 1.55 microm with turn on time ranging from 17ps to 30ps.
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