Open AccessActive photonic crystal terahertz laser
Author(s) -
A. Benz,
C. Deutsch,
G. Fasching,
K. Unterrainer,
A. M. Andrews,
P. Klang,
W. Schrenk,
G. Strasser
Publication year - 2009
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.17.000941
Subject(s) - lasing threshold , terahertz radiation , photonic crystal , laser , optics , semiconductor laser theory , materials science , optoelectronics , cascade , semiconductor , waveguide , finite difference time domain method , physics , chemistry , chromatography
We present the design and the realization of active photonic crystal (PhC) semiconductor lasers. The PhC consists of semiconductor nanostructure pillars which provide gain at a quantized transition energy. The vertical layer sequence is that of a terahertz quantum cascade laser. Thereby, the artificial crystal itself provides the optical gain and the lateral confinement. The cavities do not rely on a central defect, the lasing is observed in flat-band regions at high symmetry points. The experimental results are in excellent agreement with the finite-difference time-domain simulations. For the vertical confinement a double-metal waveguide is used. The lasers are showing a stable single-mode emission under all driving conditions. Varying the period of the PhC allows to tune the frequency by 400 GHz.