26 W optically-pumped semiconductor disk laser operating at 157-μm using wafer fusion
Author(s) -
J. Rautiainen,
Jari Lyytikäinen,
Alexei Sirbu,
A. Mereuta,
A. Caliman,
E. Kapon,
Oleg G. Okhotnikov
Publication year - 2008
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.16.021881
Subject(s) - wafer , disk laser , materials science , optoelectronics , optics , laser , semiconductor , semiconductor laser theory , distributed bragg reflector , wavelength , quantum well , physics
We report a wafer fused high power optically pumped semiconductor disk laser incorporating InP-based active medium fused to a GaAs/AlGaAs distributed Bragg reflector. A record value of over 2.6 W of output power in a spectral range around 1.57 microm was demonstrated, revealing the essential advantage of the wafer fusing technique over monolithically-grown all-InP-based structures. The presented approach allows for integration of lattice-mismatched compounds, quantum-well and quantum-dot based media. This would provide convenient means for extending the wavelength range of semiconductor disk lasers.
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