Open AccessRedshift of edge emission from AlGaInP light-emitting diodes and correlation with electron-hole recombination lifetime
Author(s) -
N. C. Chen,
ChihHong Lin,
Chien-Hua Shen,
Wei Chieh Lien,
Tzu-Ching Lin
Publication year - 2008
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.16.020759
Subject(s) - spontaneous emission , recombination , light emitting diode , carrier generation and recombination , diode , absorption edge , materials science , optics , redshift , absorption (acoustics) , electron , optoelectronics , quantum efficiency , attenuation coefficient , amplified spontaneous emission , physics , atomic physics , semiconductor , laser , chemistry , band gap , biochemistry , quantum mechanics , galaxy , gene
The edge emission from AlGaInP light-emitting diodes showed a red-shifted peak in addition to the peak of surface emission. This shift resulted from the quantum-well absorption of the guided wave. Although the shift degrades the color quality and the extraction efficiency of the device, it helps elucidate many important optical properties of the material and the dynamics of carrier recombination, including the electron-hole recombination lifetime, the optical joint density of state, the spontaneous emission spectrum and the absorption spectrum. A simple concept of the bimolecular recombination is established. The corresponding coefficient can be expressed by a simple formula and was therefore determined.