Open Access>1 MW peak power single-mode high-brightness passively Q-switched Nd^3+:YAG microchip laser
Author(s) -
Hiroshi Sakai,
H. Kan,
Takunori Taira
Publication year - 2008
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.16.019891
Subject(s) - materials science , optics , brightness , laser , q switching , pulse width modulation , power (physics) , diode , optoelectronics , physics , quantum mechanics
A high-brightness diode end-pumped Nd:YAG microchip laser, passively Q-switched by a Cr(4+):YAG saturable absorber (SA), has been developed. The dependences of pulse energy and width were investigated based on theoretical verification to enhance the peak power. As a result, the peak power exceeded 1.2 MW with M(2) = 1.04 and spectrum width Delta lambda < 5.1 pm at a repetition rate of 100 Hz. Brightness of 98 TW/sr x cm(2) was obtained with a supplied average electrical power of 2.3 W. The peak power increased up to 2.1 MW with M(2) = 1.36. Peak power of 1.7 MW was obtained from a 2-cm-diameter x 5-cm-long monolithic laser head.