Open AccessFree carrier lifetime modification for silicon waveguide based devices
Author(s) -
N. D. Wright,
David J. Thomson,
K. L. Litvinenko,
William C. Headley,
A.J. Smith,
Andrew P. Knights,
Jonathan H. B. Deane,
Frederic Y. Gardes,
Goran Z. Mashanovich,
R. Gwilliam,
Graham T. Reed
Publication year - 2008
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.16.019779
Subject(s) - free carrier absorption , materials science , silicon , free carrier , optoelectronics , carrier lifetime , absorption (acoustics) , waveguide , diode , optics , ion implantation , raman scattering , ion , raman spectroscopy , chemistry , physics , organic chemistry , composite material
We investigate the effect of silicon ion irradiation on free carrier lifetime in silicon waveguides, and thus its ability to reduce the density of two-photon-absorption (TPA) generated free carriers. Our experimental results show that free carrier lifetime can be reduced significantly by silicon ion implantation. Associated excess optical absorption from the implanted ions can be reduced to an acceptable level if irradiation energy and dose are correctly chosen. Simulations of Raman scattering suggest that net gain can be achieved in certain cases without the need for an integrated diode in reverse bias to remove the photo-generated free carriers.