Open AccessHigh-speed low-power photonic transistor devices based on optically-controlled gain or absorption to affect optical interference
Author(s) -
Yingyan Huang,
Seng-Tiong Ho
Publication year - 2008
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.16.016806
Subject(s) - optical transistor , transistor , optical switch , optoelectronics , photonics , materials science , interference (communication) , optics , power (physics) , absorption (acoustics) , optical power , computer science , physics , telecommunications , electrical engineering , voltage , laser , channel (broadcasting) , engineering , quantum mechanics
We show that a photonic transistor device can be realized via the manipulation of optical interference by optically controlled gain or absorption in novel ways, resulting in efficient transistor signal gain and switching action. Exemplary devices illustrate two complementary device types with high operating speed, microm size, microW switching power, and switching gain. They can act in tandem to provide a wide variety of operations including wavelength conversion, pulse regeneration, and logical operations. These devices could have a Transistor Figure-of-Merits >10(5) times higher than current chi((3)) approaches and are highly attractive.