Improved efficiency Si-photonic attenuator | Zendy

Dawei Zheng | Zendy; B. Thomas Smith | Zendy; Mehdi Asghari | Zendy

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Improved efficiency Si-photonic attenuator

Author(s) -

Dawei Zheng,

B. Thomas Smith,

Mehdi Asghari

Publication year - 2008

Publication title -

optics express

Language(s) - Uncategorized

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.16.016754

Subject(s) - attenuator (electronics) , optics , limiting , materials science , photonics , optoelectronics , diode , optical attenuator , physics , attenuation , multi mode optical fiber , optical fiber , engineering , mechanical engineering

A forward-biased p-i-n diode integrated with a ridge waveguide forms a basic Si attenuator building block. Disruptive power improvement was achieved through a recessed contact configuration by limiting the amount of Si volume for carrier recombination. A device model was established by using realistic surface recombination velocities instead of effective carrier lifetime concept to understand the device physics of the afore-mentioned Si attenuator.

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