Open AccessImproved efficiency Si-photonic attenuator
Author(s) -
Dawei Zheng,
Bradley A. Smith,
Mehdi Asghari
Publication year - 2008
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.16.016754
Subject(s) - attenuator (electronics) , optics , limiting , materials science , photonics , optoelectronics , diode , optical attenuator , physics , attenuation , multi mode optical fiber , optical fiber , engineering , mechanical engineering
A forward-biased p-i-n diode integrated with a ridge waveguide forms a basic Si attenuator building block. Disruptive power improvement was achieved through a recessed contact configuration by limiting the amount of Si volume for carrier recombination. A device model was established by using realistic surface recombination velocities instead of effective carrier lifetime concept to understand the device physics of the afore-mentioned Si attenuator.