
Efficient visible laser emission of GaN laser diode pumped Pr-doped fluoride scheelite crystals
Author(s) -
F. Cornacchia,
A. Di Lieto,
Mauro Tonelli,
André Richter,
E. Heumann,
G. Huber
Publication year - 2008
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.16.015932
Subject(s) - materials science , laser , tunable diode laser absorption spectroscopy , optoelectronics , optics , scheelite , laser diode , absorption (acoustics) , diode , doping , far infrared laser , absorption spectroscopy , tunable laser , wavelength , physics , tungsten , composite material , metallurgy
In the present work we report on the growth, spectroscopy and laser results of diode pumped Pr-doped LiYF(4), LiLuF(4) and LiGdF(4) fluoride, scheelite-type structure crystals. We measured the polarisation dependent absorption and emission properties as well as the decay time of the (3)P(0) level. Exploiting the (3)P(2) absorption around 444 nm, we obtained efficient laser emission under GaN laser diode pumping on several transitions from the green to the near infrared wavelength range.