
Electromagnetically induced transparency on GaAs quantum well to observe hole spin dephasing
Author(s) -
Hyon Chol Kang,
Jong Su Kim,
Sung In Hwang,
Young Ho Park,
DoKyeong Ko,
Jongmin Lee
Publication year - 2008
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.16.015728
Subject(s) - dephasing , electromagnetically induced transparency , physics , quantum decoherence , condensed matter physics , quantum beats , exciton , spin (aerodynamics) , atomic physics , quantum , quantum mechanics , thermodynamics
Electromagnetically induced transparency (EIT) was observed with transient optical response of exciton correlation in GaAs/AlGaAs quantum well structure. Decoherence of EIT was increased with temperature (12-60 K), which could be simulated by increasing non-radiation decay rate between coherently coupled ground states in Bloch equation for Lambda type three level. The non-radiation decay was mainly due to hole spin dephasing in the system for EIT via coulomb correlation. The hole spin dephasing rate was found with increasing lattice temperature and well accorded to the past results of time resolving method with n-doping material.