Open AccessFull Recess Integration of Small Diameter Low Threshold VCSELs within Si-CMOS ICs
Author(s) -
James M. Perkins,
Travis L. Simpkins,
Cardinal Warde,
Clifton G. Fonstad
Publication year - 2008
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.16.013955
Subject(s) - materials science , optoelectronics , integrated circuit , wafer , interconnection , optics , wafer bonding , cmos , silicon , vertical cavity surface emitting laser , dielectric , laser , computer network , physics , computer science
Oxide-aperture vertical-cavity surface-emitting lasers (VCSELs) have been integrated as individual device pills within the dielectric stacks of commercially produced silicon integrated circuits and monolithically connected electrically with the underlying circuitry using technology compatible with wafer-scale processing. The 55 microm diameter, 8 microm tall device pills were bonded in recesses etched to reveal buried contact/bond pads included in the IC layout; the surface was replanarized, contact vias formed, and interconnect metal deposited and patterned. The typical CW threshold current, 1 to 2.5 mA, was the same before and after integration, and integrated devices had thermal impedances similar to devices on their native GaAs substrates.