Open AccessShort pulse generation using a passively mode locked single InGaAsP/InP quantum well laser
Author(s) -
K. Merghem,
Akram Akrout,
A. Martinez,
G. Moreau,
J.P. Tourrenc,
F. Lelarge,
Frédéric van Dijk,
Guang–Hua Duan,
G. Aubin,
A. Ramdane
Publication year - 2008
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.16.010675
Subject(s) - laser linewidth , optics , optoelectronics , laser , materials science , quantum well , pulse (music) , semiconductor laser theory , mode locking , physics , detector
We report on subpicosecond pulse generation using passively mode locked lasers (MLL) based on a low optical confinement single InGaAsP/InP quantum well active layer grown in one epitaxial step. Systematic investigation of the performances of two-section MLLs emitting at 1.54 microm evidenced pulse width of 860 fs at 21.31 GHz repetition rate, peak power of approximately 500 mW and a time-bandwith product of 0.57. A 30 kHz linewidth of the photodetected radio-frequency electrical spectrum is further demonstrated at 21 GHz which is, to our knowledge, the lowest value ever reported for a quantum well device.