Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser | Zendy

K. Merghem | Zendy; Akram Akrout | Zendy; A. Martinez | Zendy; G. Moreau | Zendy; Jean-Philippe Tourrenc | Zendy; F. Lelarge | Zendy; Frédéric van Dijk | Zendy; GuangHua Duan | Zendy; Guy Aubin | Zendy; A. Ramdane | Zendy

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Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser

Author(s) -

K. Merghem,

Akram Akrout,

A. Martinez,

G. Moreau,

Jean-Philippe Tourrenc,

F. Lelarge,

Frédéric van Dijk,

GuangHua Duan,

Guy Aubin,

A. Ramdane

Publication year - 2008

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.16.010675

Subject(s) - laser linewidth , optics , optoelectronics , laser , materials science , quantum well , pulse (music) , semiconductor laser theory , mode locking , physics , detector

We report on subpicosecond pulse generation using passively mode locked lasers (MLL) based on a low optical confinement single InGaAsP/InP quantum well active layer grown in one epitaxial step. Systematic investigation of the performances of two-section MLLs emitting at 1.54 microm evidenced pulse width of 860 fs at 21.31 GHz repetition rate, peak power of approximately 500 mW and a time-bandwith product of 0.57. A 30 kHz linewidth of the photodetected radio-frequency electrical spectrum is further demonstrated at 21 GHz which is, to our knowledge, the lowest value ever reported for a quantum well device.

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